If a silicon sample is doped with 1016 phosphorous impurities/cm3, find the ionized donor density at...

 

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If a silicon sample is doped with 1016 phosphorous impurities/cm3, find the ionized donor density at 77 K. Assume that the ionization energy for phosphorous donor impurities and the electron effective mass are independent of temperature. (Hint: First select a Ni value to calculate the Fermi level, then find the corresponding N. If they don't agree, select another N, value and repeat the process until a consistent N5 is obtained.) If a silicon sample is doped with 1016 phosphorous impurities/cm3, find the ionized donor density at 77 K. Assume that the ionization energy for phosphorous donor impurities and the electron effective mass are independent of temperature. (Hint: First select a Ni value to calculate the Fermi level, then find the corresponding N. If they don't agree, select another N, value and repeat the process until a consistent N5 is obtained.)