Question: (iii) (3 points) How would changing the semiconductor from silicon to gallium-arsenide, while maintaining the same doping level, affect the reverse saturation current? For simplicity,

(iii) (3 points) How would changing the semiconductor from silicon to gallium-arsenide, while maintaining the same doping level, affect the reverse saturation current? For simplicity, you can neglect differences in the mobility or minority carrier lifetimes between $\mathrm{Si}$ and GaAs. (Circle one.)

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