In a p-n junction diode, the current I can be expressed as eV 2k T 1=1,...

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In a p-n junction diode, the current I can be expressed as eV 2k T 1=1, exp where I is called the reverse saturation current, Vis the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, kBis the Boltzmann constant (8.610 eV/K) and T is the absolute temperature. If for a given diode lo = 5 x 10-2 A and T = 300 K, then What will be the forward current at a forward voltage of 0.6 V? What will be the increase in the current if the voltage across the diode is increased to 0.7 V? What is the dynamic resistance? What will be the current if reverse bias voltage changes from 1 V to 2 V? In a p-n junction diode, the current I can be expressed as eV 2k T 1=1, exp where I is called the reverse saturation current, Vis the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, kBis the Boltzmann constant (8.610 eV/K) and T is the absolute temperature. If for a given diode lo = 5 x 10-2 A and T = 300 K, then What will be the forward current at a forward voltage of 0.6 V? What will be the increase in the current if the voltage across the diode is increased to 0.7 V? What is the dynamic resistance? What will be the current if reverse bias voltage changes from 1 V to 2 V?

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