In an intrinsic semiconductor the energy gap Egis 1.2 eV. Its hole mobility is much smaller...

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In an intrinsic semiconductor the energy gap Egis 1.2 eV. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at 600K and that at 300K? Assume that the temperature dependence of intrinsic carrier concentration nis given by E n n, 1,= 1 exp[-24-7] 2k T where no is a constant. In an intrinsic semiconductor the energy gap Egis 1.2 eV. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at 600K and that at 300K? Assume that the temperature dependence of intrinsic carrier concentration nis given by E n n, 1,= 1 exp[-24-7] 2k T where no is a constant.

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