In a two steps diffusion process in a silicon wafer using both pre-deposition and drive-in heat treatments of Aluminum with background concentration (CB) of Al in this silicon material is known to be 3 x 1019 atoms/m. The drive-in diffusion treatment is to be carried out at 1050C for a period of 4.0 hours (ta), which gives a junction depth xj of 3.0 um. Compute the pre- deposition temperature Tprequired for this process if the diffusion time tp=28.24 minutes and the surface concentration is maintained at a constant level of 2 x 1025 atoms/m?. For the diffusion of Al in Si, values of Qd and Do are 3.41 eV and 1.38 x 104 m-/s, respectively. 2. =(codzData )exp 4Data Do - = 4cty