Question: In order to create semi - insulating GaAs, a 0 . 5 mm thick wafer ( Eg = 1 : 4 2 eV ) is

In order to create semi-insulating" GaAs, a 0.5 mm thick wafer (Eg =1:42 eV) is doped with NCr =4*1018/cm3 of Cr, which has an acceptor level 0.67eV above the valence band. The Fermi level is located 0.6eV above the valence band. (a) How many Cr atoms are ionized? (5pt)(b) How many active carriers can be found in Conduction band?

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