Light of wavelength 600 nm and power of 1 mw is incident on a semiconductor photodiode...

Transcribed Image Text:

Light of wavelength 600 nm and power of 1 mw is incident on a semiconductor photodiode with an absorbing layer of thickness of (ln 4 muonm) I) If the absorption coefficent at this wavelength is 10^-4 cm^-1 and if 1% power is lost on reflection at the surface, the power absorbed will be: Light of wavelength 600 nm and power of 1 mw is incident on a semiconductor photodiode with an absorbing layer of thickness of (ln 4 muonm) I) If the absorption coefficent at this wavelength is 10^-4 cm^-1 and if 1% power is lost on reflection at the surface, the power absorbed will be:

Answer rating: 100% (QA)

The detailed ... View the full answer