Question: MOSFET Problem 1 : The problem is about MOSFET in a DC circuit. For manual calculations consider the following NMOS parameters: k n ' =

MOSFET
Problem 1: The problem is about MOSFET in a DC circuit.
For manual calculations consider the following NMOS parameters: kn'=0.1mAV2,VTH=0.9V and =0.
1.a Let WL=10. We want the transistor to be in Saturation mode with ID=0.9mA and VDS=2.1V. What should be RD and Rs?[Hint: Find first the required value of VGS].
1.b Now we want the transistor to be in Triode mode with ID=0.4mA and VDS=0.5V. What should be WL,RD and Rss?[Hint: Find first an inequality condition for VGS. Then pick up any suitable specific value for VGS. You will then be able to determine all the rest].
Problem 2: The problem is about MOSFET CS Amplifier.
The Common-Source amplifier (shown below) uses a PMOS transistor that has kp'=0.11mAV2,VTH=-0.92V and =0.01[V-1]. The bias voltage is VG=3V. We also have: VDD=5V and RD=3K.
2.a Neglect the effect of nonzero on the amplifier's DC conditions. We want ID=0.3mA and that the PMOS be in Saturation mode. What should be the value of W/L? Draw the small-signal diagram and compute Rin and the voltage gain (considering the effect of ).
2.b Now we want to modify VG and WL such that the voltage gain obtained in 2.a becomes 9 times larger, without changing any other circuit parameters and without changing ID. Can it be done? If so, specify how. Hint: For PMOS the overdrive voltage VGS-VTH is negative. Also the small-signal model of NMOS and PMOS are identical (including the dependent current source current direction).
MOSFET Problem 1 : The problem is about MOSFET in

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