need correct answer please

1 t = kpar ii.) 3. Semiconductor Processing Part II (calculation) The whole of the growth process is summarized in what is known as the Deal-Grove (DG) Model of oxide growth. In this model, the time it takes for the oxide to grow from initial thickness Z to final thickness Z is defined as: 1 -(2,-2) + (27-2) kuin (a) Using the statements below, determine the concentration profile of Oz through the oxide layer. Let z = 0 be the gas/Sio, interface and z = Z be the Si/SiO, interface. i.) Assume the pseudo-steady state approximation is valid with regards to the motion of the Si/SiO. interface. External mass transfer resistance is negligible. iii.) C(z = 0) = Co and C(z=Z) = Cs (an unknown) iv.) The surface reaction @ Z is 1" order: Roz = k"Cs v.) Assume the diffusion coefficient (DAB) and k are known and constant. (b) What is Cs in terms of the other system properties? (c) Determine the flux of Oz through the oxide layer in terms of mass transfer resistances corresponding to both diffusion and reaction. (d) With an unsteady material balance, derive the DG model above. Assume you know the density and molecular weight of Si. What are kin and kpar? Relate these linear and parabolic rate constants to growth times, oxide thicknesses, and the controlling mass-transfer process (i.e. under what conditions does one rate constant dominate over the other?)