need correct answer please

2. Semiconductor Processing Part I (conceptual) In semiconductor processing, silicon oxide (SiO2) is grown at the surface of a Si wafer. Si + 02 SIO2 The process can be assumed to take place in 3 steps: (1.) diffusion of Oz through a boundary layer in the gas to the oxide surface; (ii.) diffusion through the oxide; and (ii.) reaction at the Si/SiO, interface. Sketch, but do not solve for, the concentration profile of Oz (species A), using the general design at the bottom of this page, under the following conditions: (a) Flux rates of each step are of the same magnitude (b) Surface Reaction is very fast (diffusion-limited) (c) External Mass Transfer (gas-phase) resistance is negligible (d) Internal diffusion is very fast; external mass transfer resistance negligible Note for all cases: for simplicity, assume the concentration profile is continuous at the gas/SiO2 interface. Be aware that this is not accurate and there would be a solubility limit in the solid at the interface. Chalk Bulk Gas SI SiO, Gas BL