One method for growing thin silicon sheets for photo- voltaic solar panels is to pass two thin strings of high melting temperature material upward through a bath of molten silicon. The silicon solidifies on the strings near the surface of the molten pool, and the solid silicon sheet is pulled slowly upward out of the pool. The silicon is replenished by supplying the molten pool with solid sili- con powder. Consider a silicon sheet that is Wsi = 85 mm wide and t = 150 m thick that is pulled at a velocity of Vsi = 20 mm/min. The silicon is melted by supplying electric power to the cylindrical growth chamber of height H = 350 mm and diameter D = 300 mm. The exposed surfaces of the growth chamber are at T = 320 K, the corresponding convection coefficient at the exposed surface is h = 8 W/m K, and the surface is characterized by an emissivity of = 0.9. The solid sili- con powder is at Tii = 298 K, and the solid silicon sheet exits the chamber at Tsio = 420 K. Both the surroundings and ambient temperatures are T = Tsur = 298 K.