$$p$-$type $$ acceptor concentration$1016$ cm$-3,$ x $0.,$ x $0$excess carrier generation$,.$ Excess carrier generation rate$(=$g$)8$x$1020$ cm$-3$s$-1.$ x $>0,$ x $>0.$ Excess carrier lifetime, n $=5$x$107$ s$$ excess carrier diffusion coefficient, Dn $=25$ cm$2/$s$$ x $(-$ $$ x $$ $)$ excess carrier concentration$$ x$.,300$ K$.,$ x $=$ $,$ x $=0,$ x $=$ $$ electron$$ hole$$ quasi$-$Fermi energy level$$ Fermi energy level$$ eV $.$