Question: PART I: Theory Consider a silicon diode with reverse saturation current of ( I _ { s } = mathbf { 2 5

PART I: Theory
Consider a silicon diode with reverse saturation current of \( I_{s}=\mathbf{25}\) na.
a. Assuming that this diode is operating at room temperature \(\left(25^{\circ}\mathrm{C}\right)\), calculate the diode current \( I_{D}\) for each diode voltage \( V_{D}\) given in the following table :
b. Using the results of above table, plot the terminal characteristics of the diode.
c. Approximate the curve you have plotted in part (b) by two straight lines and calculate the parameters of the "piecewise linear model" of this diode.
PART I: Theory Consider a silicon diode with

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