PART L: Theory

Consider a silicon diode with reverse saturation current of I$\_($s$)=250.$

a$.$ Assuming that this diode is operating at room temperature $(25\backslash$deg C$),$ calculate the

diode current I$\_($D$)$ for each diode voltage V$\_($D$)$ given in the following:

V$\_($D$)=-20,-15,-10,-5,0\mathrm{.}1,0\mathrm{.}2,0\mathrm{.}3,0\mathrm{.}4,0\mathrm{.}5,0\mathrm{.}6,0\mathrm{.}7,0\mathrm{.}8,0\mathrm{.}9$

b$.$ Using the results of above table, plot the terminal characteristics of the diode.

c$.$ Approximate the curve you have plotted in part $($b$)$ by two straight lines and calculate the parameters of the "piecewise linear model" of this diode.