Please do not copy previous posts, they are wrong. Any other help will get thumbs up!

To fabricate gallium arsenide (GaAs) devices, we often use metalorganic chemical vapor deposition (MOCVD) to grow a monocrystalline GaAs film on a GaAs wafer as the substrate. In MOCVD, the Ga comes from trimethylgallium. Ga(CH3)3, a gaseous precursor for Ga, and the As from arsine. AsH3, a gaseous precursor for As. The carbon in Ga(CH3)3 can be trapped in the GaAs film and become a dopant. The hydrogen does not stay in the GaAs film. (a) If a carbon atom replaces a Ga atom in the GaAs film, is the carbon atom a donor or accepter? If a carbon atom replaces an As atom in GaAs, is it a donor or accepter? (1 point) (b) If the total carbon concentration in GaAs is 1x1016 cm and 90% of the carbon replaces Ga, what is the donor concentration? What is the acceptor concentration? (1 point) () If the total carbon concentration in GaAs remains the same. IX1066 cm- but 60% of the carbon replaces As, what is the donor concentration? What is the acceptor concentration? (1 point) (d) In parts (b) and (c) respectively, what is the net carrier concentration assuming 100% dopant ionization? Is the GaAs film n-type or p-type? (1 point)