Question: Problem 2 An article in the IEEE Transactions on Instrumentation and Measurement [Direct, Fast, and Accurate Measurement of VT and K of MOS Transistor Using

 Problem 2 An article in the IEEE Transactions on Instrumentation and

Measurement [\"Direct, Fast, and Accurate Measurement of VT and K of MOS

Problem 2 An article in the IEEE Transactions on Instrumentation and Measurement [\"Direct, Fast, and Accurate Measurement of VT and K of MOS Transistor Using VTSift Circuit\" (1991, Vol. 40, pp. 9517955)] described the use of a simple linear regression model to express drain current y (in milliamperes) as a function of groundtosource voltage x (in volts). The data are in the sheet transistor. a. Fit a regression model relating compressive strength (3;) to density (33). Using t-tests, test for an association between the predictor and response using a: = 0.05. b. Calculate R2 for this model. Provide an interpretation of this quantity. 0. Prepare a normal probability plot of the residuals and interpret this display. (1. Plot the residuals versus 3}. Does the assumption of constant variance seem to be satised? e. Are there high leverage points or outliers? f. Based on the Whole analysis, is your conclusion to part (a) reliable? Briey discuss why or why not

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