Problem 3 (25 points) Consider a silicon semiconductor under thermal equilibrium. The density of holes is determined experimentally to be 1.5x10 cm' and NA - 1.5x 105 cm Assume T - 300K n = 1.5x10cm, KT=0.026eV. Ha = 1350 cm (V.s), p = 480 cm/(V.). ER-1.12 eV. a) (5 points) is the semiconductor n-type or p-type? Why? b) (5 points) Determine the majority and minority carrier concentrations c) (5 points) What types and concentrations of impurity atoms exist in the material? d) (5 points) Determine the conductivity. e) (5 points) Draw the energy band diagram