Q$\mathrm{.}1.$ Consider equivalent circuit for solar cell with a shunt resistance only. Find the open circuit voltage and plot I$-$V curve for a polysilicon solar cell such that $n=4,I_0=3{10}^{-4}mA(I_s),$ for an illumination with $I_{ph}=5mA.$ Use $R_{sh}=$ and $1$ ohm $.$

Q$\mathrm{.}2.$ Consider a silicon solar cells with a thickness of $100m$ and light intensity of $1{10}^{24}(\frac{\text{p}\text{h}\text{o}\text{t}\text{o}\text{n}\text{s}}{c{m}^{2}s})$ at the surface. Calculate the generation rate at the surface, middle, and bottom of the silicon solar cell. Plot the generation rate curve versus the depth of the junction. Assume the absorption coefficient is constant at $700$ nm $.$