Q$3$:

Problem Statement: Consider an NMOS process technology for which $L_{\text{m}\text{i}\text{n}}=0\mathrm{.}4m,t_{ox}=8nm,{}_n=450c\frac{m^2}{V}s,V_t=0\mathrm{.}7V.$

Q$($a$)$: Find $C_{ox}$ and $k_n^{\text{'}}.$

Q$($b$)$: For a MOSFET with $\frac{W}{L}=8\frac{m}{0\mathrm{.}8}m,$ calculate the values of $v_{OV},v_{GS},$ and $v_{\text{D}\text{S}\text{m}\text{i}\text{n}}$ needed to operate the transistor in the saturation region with dc current $I_D=100A.$

$Q(c)$ : For the device in $($b$),$ find the values of $v_{OV}$ and $v_{GS}$ required to cause the device to operate as a $1000$ ohm resistor for very small $v_{DS}.$