Q1. The process sequence and layout for making a simple polysilicon micromechanical bridge are listed below. Using IC based processes; we can make structures for sensing non electrical inputs, such as acceleration. Assume positive photoresist. Deposit 2 micron of CVD Sio2 Pattern with the anchor mask Implant phosphorus and anneal 4. Deposit 2 micron of phosphorus doped polysilicon and anneal 5. Pattern with poly mask. 6 Etch for 4 minutes in hydrofluoric acid (HF) (SiO2 etch rate 1 micron/min) Assume isotropic etching (undercutting at the same rate) Rinse and dry anchor mask (dark field) poly mask (clear field) (a) Draw the cross-sectional A-A after step 4 and after completion of the process (b) Draw the cross-sectional B-B after step 6 is half completed (2 minutes of HF etching) and after completion of the process (c) Draw the cross-sectional C-C after completion of the process Q1. The process sequence and layout for making a simple polysilicon micromechanical bridge are listed below. Using IC based processes; we can make structures for sensing non electrical inputs, such as acceleration. Assume positive photoresist. Deposit 2 micron of CVD Sio2 Pattern with the anchor mask Implant phosphorus and anneal 4. Deposit 2 micron of phosphorus doped polysilicon and anneal 5. Pattern with poly mask. 6 Etch for 4 minutes in hydrofluoric acid (HF) (SiO2 etch rate 1 micron/min) Assume isotropic etching (undercutting at the same rate) Rinse and dry anchor mask (dark field) poly mask (clear field) (a) Draw the cross-sectional A-A after step 4 and after completion of the process (b) Draw the cross-sectional B-B after step 6 is half completed (2 minutes of HF etching) and after completion of the process (c) Draw the cross-sectional C-C after completion of the process