Question 21 (1 point) Which statement best describes a N-type Schottky contact under forward bias. 0 A voltage is applied which reduces the height of barrier impeding flow of electrons from the metal to the semiconductor. This produces an increase in the thermionic current, resulting in a large current through the device. 0 A voltage is applied which reduces the height of barrier impeding flow of electrons from the semiconductor to the metal. This produces an increase in the thermionic current, resulting in a large current through the device. 0 A voltage is applied which increases the height of barrier impeding flow of electrons from the semiconductor to the metal. This produces an increase in the thermionic current, resulting in a large current through the device. 0 A voltage is applied which reduces the height of barrier impeding flow of electrons from the semiconductor to the metal. This produces an decrease in the thermionic current, resulting in a small current through the device