Question: Question 3 [Soalan 3] Focus Analyzing magnet 0-200keV Neutral trap X&Y scan plates Wafer Accelerator Neutral beam gate Resolving bperature 0-30keV Faraday cup Ion source
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Question 3 [Soalan 3] Focus Analyzing magnet 0-200keV Neutral trap X&Y scan plates Wafer Accelerator Neutral beam gate Resolving bperature 0-30keV Faraday cup Ion source Figure 3 [Rajah 3] Based on Figure 3, explain the principle of mechanism for ion implantation system. [Berdasarkan Rajah 3, terangkan prinsip mekanisme bagi sistem penanaman ion. (16 Marks/ Markah)
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