Question 5: Evaluate the average gate capacitance of, and power dissipated by, a processor with the following properties Gate oxide thickness = 1.4 nm Gate length = 65 nm Gate area =(65 nm)x(65 nm) Permittivity of free space = 8.85 x 10e-12 Farads/m. Relative permittivity of SiO2 = 3.9 Rail-to-rail voltage = 1.1 V Clock frequency = 3.6 GHz Switching probability = 1.0 Number of transistors per die = 1.3 x 10e9