Question $7$

A boron diffusion into an n$-$type silicon wafer results in a Gaussian profile with a surface concentration of $4\frac{{10}^{18}}{c}{m}^3$ and a junction depth of $4m.$ The background concentration of the $n-$type silicon wafer is $2\frac{{10}^{15}}{c}{m}^3.$ The boron diffusivity at $1100C$ is $D=2\frac{{10}^{-13}}{c}{m}^{-1}se{c}^{-1}.$

$($a$)$ How long did the diffusion take if the diffusion temperature was $1100C?$

$($b$)$ What was the sheet resistance of the layer?

$($c$)$ What was the dose in the layer?

Use the editor to format your answer