$4\mathrm{.}3$ A boron diffusion inlD a l$-$ohm$$cm 'Hype wafer results in a Gaussian profile with $8$ surface

concentration of $5$ X l QI$8/$cm$)$ and a junction depth of $4$ J$.$Im$.$

$($II$)$ How long did the diffusion take if the diffusion temperature was $1100$el

$($b$)$ What was the sheet resistance of the layer?

$($c$)$ What is the dose in the layer?

$($d$)$ The boron dose was deposited by a solid$-$solubility$-$limited diffusion. Design a diffusion

schedule $($temperature and time$)$ for this predeposition st