a) Briefly describe how a P-N junction is made. = b) Given that germanium at room...

  

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a) Briefly describe how a P-N junction is made. = b) Given that germanium at room temperature ni = 2.5 x 10¹/cm³, un 3800 cm²/V-Vs, Hp = 1800 cm²/V-Vs and a number of Germanium atoms/cm³ = 4.4 × 10²2. Determine the resistivity of germanium: i. ii. 111. in intrinsic condition at 300 K with donor impurity of 1 in107 with acceptor impurity of 1 in 108 (4 marks) (6 marks) (4 marks) a) Briefly describe how a P-N junction is made. = b) Given that germanium at room temperature ni = 2.5 x 10¹/cm³, un 3800 cm²/V-Vs, Hp = 1800 cm²/V-Vs and a number of Germanium atoms/cm³ = 4.4 × 10²2. Determine the resistivity of germanium: i. ii. 111. in intrinsic condition at 300 K with donor impurity of 1 in107 with acceptor impurity of 1 in 108 (4 marks) (6 marks) (4 marks)

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Suppose we dope an intrinsic semiconductor with the trivalent dopant elements In that case i... View the full answer