semiconductor work function difference. The relative dielectric constant of the oxide is $K_0=3\mathrm{.}9.$

a$)$ wnat it me surrace potenua, ${}_s$ :

b$)$ What gate voltage, $V_G,$ is applied?

c$)$ What is the voltage across the oxide, ${}_{ox}?$

d$)$ What is the doping density, $N_D$