Sketch how a film deposited by evaporation will look after 1.0 m and 2.0 m of deposition (measured on the flat surfaces) on the cross section below. Your sketches have to be proportional and qualitatively correct (no calculations needed). Assume that source is a point source that is far away from the wafer (i.e., the incoming flux is uniform and parallel). 5-2. Sketch how a film deposited by sputtering will look after 1.0 m and 2.0 m of deposition (measured on the flat surfaces) on the cross section below. Your sketches have to be proportional and qualitatively correct (no calculations needed). Assume that the source is large (much wider) compared to the wafer and is not very far away from it (~5 cm). 5-3. Sketch how a film deposited by a reaction-rate limited LPCVD process will look after look after 1.0 m and 2.0 m of deposition (measured on the flat surfaces) on the cross section below. Your sketches have to be proportional and qualitatively correct (no calculations needed). Page 5 5-4. Sketch how a film deposited by a mass-transport limited LPCVD process will look after 1.0 m and 2.0 m of deposition (measured on the flat surfaces) on the cross section below. Your sketches have to be proportional and qualitatively correct (no calculations needed). 5-5. Sketch how a dopant distributions formed by diffusion (gas source) will look after profiles are formed with junction depths that are 1.0 m and 2.0 m deep (as measured from the flat surfaces on top) on the cross section below. Your sketches have to be proportional and qualitatively correct (no calculations needed). 5-6. Sketch how a dopant distribution formed by ion implantation will look if Rp = 1 m, and Rp = Rp.lateral = 0.5 m (as measured on the flat surfaces on top) on the cross section below. Your sketch has to be proportional and qualitatively correct (no calculations needed). Assume that junction (intersection of the implanted distribution and the background concentration) occurs at a distance Rp = Rp.lateral from the peak concentration. Draw equi-concentration lines (i.e., just like a topographical map) for the peak concentration and the junction concentration are parallel and uniform. (i.e., the incoming flux is uniform and parallel).  

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Sketch how a film deposited by evaporation will look after 1.0 and 2.0 um of deposition (measured on the flat surfaces) on the cross section below. Your sketches have to be proportional and qualitatively correct (no calculations needed). Assume that source is a point source that is far away from the wafer (i.e., the incoming flux is uniform and parallel). 2 m Sketch how a film deposited by evaporation will look after 1.0 and 2.0 um of deposition (measured on the flat surfaces) on the cross section below. Your sketches have to be proportional and qualitatively correct (no calculations needed). Assume that source is a point source that is far away from the wafer (i.e., the incoming flux is uniform and parallel). 2 m