Question: SRAM: static random access memory uses multiple transistors DRAM: dynamic random access memory has memory cells with a paire FPM DRAM: Fast page mode dynamic

SRAM: static random access memory uses multiple transistors DRAM: dynamic random access memory has memory cells with a paire FPM DRAM: Fast page mode dynamic random access memory EDO DRAM: extended data out dynamic random access memory does not processing of the first bit before continuing to the next one. What linear address corresponds to the segment/offset address 042F.00A8

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