Thanks. it is semiconductor part.

State : n type equally doped semiconductor. on X-Y axis. no E involved. Constant light (hf) is equally involved on the all of the plate. low level dopant. plate of (x=0, yz plane, striped left side) there is a carrier sink.

Problem

(a) State : Excess minor carrier hole's lifetime is 'p=10^-8[sec] at plane x=0( There are some defects). The other space, p0 = 10^-7[sec]. When it steady state, x=, the excess minor carrier hole concentration

p()= 10^10[cm-3], Dp = 12 [cm^2/sec].

Get the excess hole distribution of x at the steady state.

(b) 'p=10^-7[sec] at plane x=0(There are no defects),

Get the excess hole distribution of x at the steady state.

(c) 'p=0[sec] at plane x=0(There are infinite defects),

Get the excess hole distribution of x at the steady state.

xde ploo) 11 op(0) 0 0 L, OX xde ploo) 11 op(0) 0 0 L, OX