The capacitance (C) of a reverse-biased abrupt Si pn junction has been measured as a function of the reverse bias voltage V, as listed in Table 6.7. The parasitic capacitance has been subtracted from the measurements so that C represents the depletion region capacitance. The pn junction cross-sectional area is 500 m x 500 m. By plot- ting 1/C versus V,, obtain the built-in potential V, and the donor concentration N, in the n-region. What is No? Table 6.7 Capacitance at various values of reverse bias (V.) V, (V) 3 5 C (PF) 26.4 21.3 1 38.3 2 30.7 10 15.6 15 12.9 20 11.3