Question: The problem involves a silicon wafer with a 0.1 x 2 square micrometer area. The wafer has a phosphorus doping concentration of / . The

The problem involves a silicon wafer with a 0.1 x 2 square micrometer area. The wafer has a phosphorus doping concentration of /. The basic process conditions are set as follows: the temperature at 1000 degrees Celsius, boron doping at a concentration of / Time of 30 minutes, and energy of 70 keV.

I want to analyze the results of simulation graphs depicting the effects of implant energy and boron doping concentration variations on the implantation process.

For simulation, we are asked to analyze the graphs representing the effects of increasing boron doping ( and energy of 70 keV. I want to analyze the results of / simulation graphs depicting the effects of implant energy and boron doping concentration Vs variations on the implantation process. For simulation, we are asked to analyze /Vs / Please explain in detail the differences observed in these graphs and why? ) and raising the energy level (40 vs. 70 vs 100 ).

(+ if time and temperature increase, what should we consider and change the graph ) 1014 cm3 1012 cm3 1011 cm3 1012 cm3 103

Please explain in detail the differences observed in these graphs and why?

(+ if time and temperature increase, what should we consider and change the graph )

1014 cm3 1012 cm3 1011 cm3 1012 cm3 103 cm3

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