1. Where are carbon atoms forced to go in GaAs with less Ga(CH3)3 and more AsH3?

2. Can you guess why there is a singularity in the figure where the net carrier concentration goes to zero? You can assume that the total carbon concentration in GaAs is constant.

Transcribed Image Text:

Carrier Concentration (cm³) (e) The following figure shows how the ratio of AsH3 to Ga(CH3)3 partial pressures in MOCVD affects the conduction type (n or p) and net carrier concentration of the GaAs film (S. Ito, T. Shinohara, and Y. Seki, Journal of the Electrochemical Society, vol. 120, p. 1419 (1973)). With more Ga(CH3)3 and less AsH3, the GaAs film becomes p-type. With less Ga(CH3)3 and more AsH3, the GaAs film becomes n-type. You can find help for the following questions in my paper: M. Tao, Journal of Applied Physics, vol. 87, p. 3554 (2000). 10¹8 10¹6 10° p-type Model Model n-type GaAs(001) 10¹ AsH /Ga(CH₂) Ratio 10² Carrier Concentration (cm³) (e) The following figure shows how the ratio of AsH3 to Ga(CH3)3 partial pressures in MOCVD affects the conduction type (n or p) and net carrier concentration of the GaAs film (S. Ito, T. Shinohara, and Y. Seki, Journal of the Electrochemical Society, vol. 120, p. 1419 (1973)). With more Ga(CH3)3 and less AsH3, the GaAs film becomes p-type. With less Ga(CH3)3 and more AsH3, the GaAs film becomes n-type. You can find help for the following questions in my paper: M. Tao, Journal of Applied Physics, vol. 87, p. 3554 (2000). 10¹8 10¹6 10° p-type Model Model n-type GaAs(001) 10¹ AsH /Ga(CH₂) Ratio 10²

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a The usual method of carbon atoms interaction with GaAs using MOCVD is for the reactive hydrocarbon... View the full answer