The silicon chip goes through the process as below: The source of phosphorus from POCl3 vapor is given in the pre-deposition process. The source is then turned off. Second, the further diffusion process is given. The pre-deposition process occurred at 900C for 30 minutes. During the pre-deposition process, the surface concentration of No was the solubility limit of phosphor. The diffusivity of phosphorus was determined from the diagram. The further diffusion process was carried out at 1000C for 2 hours. Basic concentration (background) of 1 x 1016 cm-3. (a) Calculate the dose Q in the pre-deposition process if the surface concentration is 5.31 x 1020 atoms cm-3. (b) In the further diffusion process, write the equation for the concentration of phosphorus on the surface (x=0 cm) as a function of time (c) Calculate the concentration of phosphorus on the surface after completion of the further diffusion process. Hint: the magnitude will be smaller than problem (i) (d) Calculate the junction depth after the further diffusion process in micrometers. (e) Draw the energy band diagram