This assignment is designed to assess your capability of computing the probabilities and expectation values of electron and hole occupations at various energy levels in a metal and a semiconductor. You should show your ability to compute and interpret the probabilities under various conditions, $-$ changing temperatures and changing dopant concentrations in different materials $($bandgaps$).$ A confluence of learning strategies analytical thinking, ability to conduct independent literature survey, ability to present findings in a clear fashion, among others $-$ is required. A confluence of learning strategies analytical thinking, ability to conduct independent literature survey, ability to present findings in a clear fashion, among others. In particular, you must be able to demonstrate the ability to self$-$learn content beyond that taught in classroom instruction.