Question: What is the minimum value of Vds that will keep a MOSFET in saturation in millivolts, for an NMOS FET with Vgs = 798mV, and
What is the minimum value of Vds that will keep a MOSFET in saturation in millivolts, for an NMOS FET with Vgs = 798mV, and Vsb = 0V ? Include the effects of velocity saturation, and assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of Wdmax = 78nm. Use: W = 5.3m, L = 0.8m, Toxe = 22 angstroms, Vt = 454mV, ns = 293 cm^2/Vs, and Vsat = 8 x 10^6 cm/s.The correct answer is: 296 can u show how to get the
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