When manufacturing semiconductors, photolithography is an important step. During this process, a light sensitive photoresist material...

 

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When manufacturing semiconductors, photolithography is an important step. During this process, a light sensitive photoresist material is applied to the silicon wafer. Next, the circuit pattern is exposed on the resist using a high-intensity UV light. Once the resist pattern is in place, the underlying material is removed in the developing process, by either wet chemical or plasma etching. Following this, a hard-bake process is performed to increase resist adherence and etch resistance. An important timing issue in this process is the amount of time the circuit pattern on the resist is exposed to the high-intensity UV light. An important characteristic in this hard-bake process is the flow width of the resist. In other words, the amount of resist expansion during baking is measured. For our process, the target dimension is 1.50 microns +/- 0.15. Calculate Cp and Cpk for the amount of resist expansion during baking. For the process under study, the average is 1.49 microns with an average range of 0.05, n = 4 Perform Design of Experiment (DOE) and write a report explaining the implementation of design of experiment depending on causes of the failure of vibrating windshield. The factors were decided as temperature, humidity, wind speed by implementing the full factorial of the design experiment. As a result of this experiment, you should obtain how to affect the strength of the windshield against vibration. Use given data below to perform DOE. When manufacturing semiconductors, photolithography is an important step. During this process, a light sensitive photoresist material is applied to the silicon wafer. Next, the circuit pattern is exposed on the resist using a high-intensity UV light. Once the resist pattern is in place, the underlying material is removed in the developing process, by either wet chemical or plasma etching. Following this, a hard-bake process is performed to increase resist adherence and etch resistance. An important timing issue in this process is the amount of time the circuit pattern on the resist is exposed to the high-intensity UV light. An important characteristic in this hard-bake process is the flow width of the resist. In other words, the amount of resist expansion during baking is measured. For our process, the target dimension is 1.50 microns +/- 0.15. Calculate Cp and Cpk for the amount of resist expansion during baking. For the process under study, the average is 1.49 microns with an average range of 0.05, n = 4 Perform Design of Experiment (DOE) and write a report explaining the implementation of design of experiment depending on causes of the failure of vibrating windshield. The factors were decided as temperature, humidity, wind speed by implementing the full factorial of the design experiment. As a result of this experiment, you should obtain how to affect the strength of the windshield against vibration. Use given data below to perform DOE.

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