Which statement is correct about photolithography? A $()$ at near field, exposure contrast is high, but resolution is low. B $()$ at far field, exposure contrast is low, but resolution is high. C $()$ the exposure contrast is determined by the number of orders captured by the lens. D $()$ For photolithography to create same pattern on the wafer as mask, it needs at least two orders as minimum, but not necessarily need zero order.