Question: WRITE MATLAB PROGRAM PLEASE Part 3: Carrier mobility as a finction of T and doping The majority carrier drift mobility as a function of doping

WRITE MATLAB PROGRAM PLEASE

WRITE MATLAB PROGRAM PLEASE Part 3: Carrier mobility as a finction of

T and doping The majority carrier drift mobility as a function of

Part 3: Carrier mobility as a finction of T and doping The majority carrier drift mobility as a function of doping concentration at room temperature is commonly computed from equation (5) where u is the carner mobility (H Or Hp), N is the doping concentration (Na or ND), and all other quantities are fit parameters. Amin, , Nef, or depend on temperature. To model the temperature dependence of these parameters, the following equation can be employed. A-A 200 A in the above equation represents nmin, , Nef, ora; A300 is the 300K value of the parameter, is the temperature exponent. The fit parameters for Si are listed in the following table Values at 300K Electrons 1.3 x 10 92 1268 0.91 Holes 2.35 x 10 54.3 406.9 0.88 Parameter 2.4 0.57 2.3 0.146 cm/Vs i) Using the above information for T = 300K, write a MATLAB program to construct a log-log plot of , versus ND for 1014 crm's Nis 101) cmr. In the same graph, plot uo versus NA for 104 cm S NA S 101% cm ii) Using the above information, write a MATLAB program to construct a plot of Ha versus T for 200 K T 600 K at ND-1016 cn' (use the function semilogy to plot). In the same graph, plot ? versus T for 200 K s Ts 600 K at N,-1016 cm" Part 3: Carrier mobility as a finction of T and doping The majority carrier drift mobility as a function of doping concentration at room temperature is commonly computed from equation (5) where u is the carner mobility (H Or Hp), N is the doping concentration (Na or ND), and all other quantities are fit parameters. Amin, , Nef, or depend on temperature. To model the temperature dependence of these parameters, the following equation can be employed. A-A 200 A in the above equation represents nmin, , Nef, ora; A300 is the 300K value of the parameter, is the temperature exponent. The fit parameters for Si are listed in the following table Values at 300K Electrons 1.3 x 10 92 1268 0.91 Holes 2.35 x 10 54.3 406.9 0.88 Parameter 2.4 0.57 2.3 0.146 cm/Vs i) Using the above information for T = 300K, write a MATLAB program to construct a log-log plot of , versus ND for 1014 crm's Nis 101) cmr. In the same graph, plot uo versus NA for 104 cm S NA S 101% cm ii) Using the above information, write a MATLAB program to construct a plot of Ha versus T for 200 K T 600 K at ND-1016 cn' (use the function semilogy to plot). In the same graph, plot ? versus T for 200 K s Ts 600 K at N,-1016 cm

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