Consider a double heterostructure laser operating at an wavelength = 1130 nm. The active region is a III-V ternary semiconductor alloy: Ino.2 Gao.8As. The active layer (cavity) length L = (220 + XY)m. Cross sectional area (dx w) of the cavity is (3+0.0Y) m where the thickness must be within the range 0.15m < d < 0.25m ,as = 20 cm-, threshold carrier concentraion, nth = 1.75 x 1. the radiative lifetime in the active region is T, = 2.5ns. Refractive index of the active region is expressed as n = 3.52xy +3.39(1-y) + 3.6y(1-x)+3.56(1-x)(1-y) for InxGa-xAsyP-y. Determine the following: 108 cm3, [30 Marks] a. Refractive indices of the materials. b. Reflectivity, R. c. Loss of radiation due to the reflections in cavity mirrors, am d. Threshold gain, 9th. e. Threshold current density, Ith- f. Threshold current, Ith- g. Photon life time, Tph- h. Output optical power at a current at I = 21th."