Design a MOSFET circuit in the configuration shown in Figure P3.26. The transistor parameters are VTN = 0.4V and k = 120 A/V, and = 0. The circuit parameters are VDD =3.3V and Rp = 5 k2. Design the circuit so that VpsQ 1.6V and the voltage across Rs is approximately 0.8V. Set VGS = 0.8V. The current through the bias resistors is to be approximately 5 percent of the drain current.

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VDD = 10 V R = 32 ks2 RD=4kQ R = 18 k Rs = 2 kQ Figure P3.26