For a p-channel enhancement-mode MOSFET, the parameters are \(K_{P}=\) \(2 \mathrm{~mA} / \mathrm{V}^{2}\) and \(V_{T P}=-0.5 \mathrm{~V}\). The gate is at ground potential, and the source and substrate terminals are at \(+5 \mathrm{~V}\). Determine \(I_{D}\) when the drain terminal voltage is:

(a) \(V_{D}=0 \mathrm{~V}\),

(b) \(V_{D}=2 \mathrm{~V}\),

(c) \(V_{D}=4 \mathrm{~V}\), and

(d) \(V_{D}=5 \mathrm{~V}\).