The donor concentration in the n-region of a silicon pn junction is (N_{d}=10^{16} mathrm{~cm}^{-3}). Plot (V_{b i})

Question:

The donor concentration in the n-region of a silicon pn junction is $N_{d}=10^{16} \mathrm{~cm}^{-3}$. Plot $V_{b i}$ versus $N_{a}$ over the range $10^{15} \leq N_{a} \leq 10^{18} \mathrm{~cm}^{-3}$ where $N_{a}$ is the acceptor concentration in the p-region.

Fantastic news! We've Found the answer you've been seeking!