The resistivity ? of doped silicon is based on the charge q on an electron, the electron density n, and the electron mobility ?. The electron density is given in terms of the doping density N and the intrinsic carrier density n_i. The electron mobility is described by the temperature T, the reference temperature T₀, and the reference mobility ?₀. The equations required to compute the resistivity are ? = 1/qn?

Where

Determine N, given T₀ = 300 K, T = 1000 K, ?₀ = 1350 cm² (V s) ^?1, q = 1.7 x 10^?19 C, n_i = 6.21 x 10⁹ cm^?3, and a desired ? = 6.5 x 10⁶ V s cm/C. Use?

(a) Bisection and

(b) The modified secant method.

Transcribed Image Text:

-2.42 T. 2.42 N + 41 and Ort = 11 To