Assume both electron and hole concentrations in a semiconductor are raised by n above their equilibrium values Define a net minority carrier lifetime t by R n t give expressions for t in terms of the carrier concentrations ng and nb the energy of the recombination level, as expressed by ng and nh a...

We write ne n Then from 98 t te R nh neo tn n De ne theoth nh Nhote neonho th I For sufficiently small values of n the two nterms may be neglected lea ...

Assume both electron and hole concentrations in a semiconductor are raised by n above their equilibrium values.

Question:

Assume both electron and hole concentrations in a semiconductor are raised by δn above their equilibrium values. Define a net minority carrier lifetime t by R = δn/t. give expressions for t in terms of the carrier concentrations ng and nb: the energy of the recombination level, as expressed by ng * and nh *; and the time constants tg and th, in the limits of very small and very large values of δn. Under what doping condition is t independent of δn?