Question: Design a voltage-divider bias network using a depletion-type MOSFET with IDSS = 10 mA and VP = -4 V to have a Q-point at IDQ

Design a voltage-divider bias network using a depletion-type MOSFET with IDSS = 10 mA and VP = -4 V to have a Q-point at IDQ = 2.5 mA using a supply of 24 V. In addition, set VG = 4 V and use RD = 2.5Rs with R1 = 22 MΩ. Use standard values.

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