An NMOS transistor has parameters W = 10 m, L=1 m, k =194 A/V 2 ,

An NMOS transistor has parameters W = 10 µm, L=1 µm, k’ =194 µA/V², λ = 0.024 V⁻¹, t_ox = 80 Aͦ, ϕ_f = 0.3 V, V_t0 = 0.6 V, and N_A = 5×10¹⁵ atoms/cm³. Ignore velocity saturation effects.

(a) Sketch the I_D - V_DS characteristics for V_DS from 0 to 3V and V_GS = 0.5 V, 1.5 V, and 3 V. Assume V_SB = 0.

(b) Sketch the I_D - V_GS characteristics for V_DS = 2V as V_GS varies from 0 to 2 V with V_SB = 0, 0.5 V, and 1 V.