Calculate the breakdown voltage for the junction of Problem 1.1 if the critical field is crit

Calculate the breakdown voltage for the junction of Problem 1.1 if the critical field is ℰ_crit = 4 × 10⁵ V/cm.

Data from Prob. 1.1

Calculate the built-in potential, depletion-layer depths, and maximum field in a plane-abrupt pn junction in silicon with doping densities N_A = 8 × 10¹⁵ atoms/cm³ and N_D = 10¹⁷ atoms/cm³. Assume a reverse bias of 5 V.