How would your answer to Problem 6-13 change if arsenic flow rate was more difficult to control

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How would your answer to Problem 6-13 change if arsenic flow rate was more difficult to control in the process than the deposition time?


Problem 6-13

An article in the AT&T Technical Journal (March/April 1986, Vol. 65, pp. 39-50) describes the application of two-level factorial designs to integrated circuit manufacturing. A basic processing step is to grow an epitaxial layer on polished silicon wafers. The wafers mounted on a susceptor are positioned inside a bell jar, and chemical vapors are introduced. The susceptor is rotated and heat is applied until the epitaxial layer is thick enough. An experiment was run using two factors: arsenic flow rate (A) and deposition time (B). Four replicates were run, and the epitaxial layer thickness was measured (in tun). The data are shown below:

Replicate Factor Levels A B I II III IV Low (-) High (+) 14.037 16.165 13.972 13.907 A 55% 59% 13.880 13.860 14.032 13.914 Long (15 min) 14.821 14.757 14.843 14.878 Short + 14.888 14.921 14.415 14.932 (10 min) + +

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