Using the characteristics of Fig. 3.23c , determine the level of b dc at I_C = 10 mA at the three levels of temperature appearing in the figure. Is the change significant for the specified temperature range? Is it an element to be concerned about in the design process?

Fig. 3.23

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MAXIMUM RATINGS Symbol VCEO Rating 2N4123 Unit Collector-Emitter Voltage 30 Vdc FAIRCHILD Collector-Base Voltage VCBO 40 Vdc SEMICONDUCTOR ™M Emitter-Base Voltage VEBO 5.0 Vdc 2N4123 Collector Current-Continuous Total Device Dissipation @ TA = 25'C Ic 200 mAde Pp 625 mW Derate above 25 C 5.0 mWC Operating and Storage Junction Tj. Tag -55 to +150 °C stg Temperature Range TO-92 THERMAL CHARACTERISTICS BE Characteristic Symbol Маx Unit General Purpose Thermal Resistance, Junction to Case Rejc 83.3 °C W Transistor Thermal Resistance, Junction to Ambient ROJA 200 °C W NPN Silicon ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)